*rohs directive 2002/95/ec jan 27 2003 including annex february 2005 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP7350H3SLL overvoltage protector TISP7350H3SLL triple element bidirectional thyristor overvoltage protector 3-sip (long lead) package (top view) *rohs compliant simultaneous 500 a 2/10 gr-1089-core rating simultaneous 100 a 10/1000 gr-1089-core rating ion-implanted breakdown region - precise and stable voltage low voltage overshoot under surge device name v drm v v (bo) v TISP7350H3SLL 275 350 rated for international surge wave shapes - single and simultaneous impulses wave shape standard i ppsm a 2/10 gr-1089-core 500 8/20 iec 61000-4-5 350 10/160 tia-968-a 250 10/700 tia-968-a itu-t k.20/21 200 10/560 tia-968-a 130 10/1000 gr-1089-core 100 mdxxaz a 1 2 3 t g r device symbol sd-tisp7-001-a g t r description the TISP7350H3SLL limits overvoltages between the telephone line ring and tip conductors and ground. overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. each terminal pair, t-g, r-g and t-r, has a symmetrical voltage-triggered bidirectional thyristor protection characteristic. ov ervoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage onstate. this low-voltage on-state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. these monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover c ontrol and are virtually transparent to the system in normal operation. they are designed to voltage limit and withstand the listed internatio nal lightning surges in both polarities. how to order device package carrier marking code std. qty. TISP7350H3SLL 3-sip (long lead) tape & ammo pack TISP7350H3SLLas sp7350h3 2000 tube TISP7350H3SLL-s 1000 order as ..................................................ul recognized component
february 2005 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP7350H3SLL overvoltage protector absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage (see note 1) v drm 275 v non-repetitive peak impulse current (see notes 2 and 3) 2/10 s (gr-1089-core, 2/10 s voltage wave shape) 8/20 s (iec 61000-4-5, 1.2/50 s voltage wave shape, 8/20 current combination wave generator) 10/160 s (tia-968-a, 10/160 s voltage wave shape) 4/250 s (itu-t k.20/21, 10/700 s voltage waveshape, dual) 0.2/310 s (cnet i 31-24, 0.5/700 s voltage waveshape) 5/310 s (itu-t k.20/21, 10/700 s voltage wave shape, single) 5/320 s (tia-968-a, 9/720 s voltage wave shape) 10/560 s (tia-968-a, 10/560 s voltage wave shape) 10/1000 s (gr-1089-core, 10/1000 s voltage wave shape) i ppsm 500 350 250 225 200 200 200 130 100 a non-repetitive peak on-state current (see notes 2, 3 and 4) i tsm 55 60 0.9 a 20 ms, 50 hz (full sine wave) 16.7 ms 60 hz (full sine wave) 1000 s, 50 hz a.c. initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 a di t /dt 400 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. derate value at -0.13 %/ c for ambient temperatures below 25 c. 2. initially the device must be in thermal equilibrium with t j = 25 c. 3. these non-repetitive rated currents are peak values of either pola rity. the rated current values may be applied to any termi nal pair. additionally, both r and t terminals may have their rated current values applied simultaneously (in this case the g terminal re turn current will be the sum of the currents applied to the r and t termin als). the surge may be repeated after the device returns to its initial conditions. 4. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. derate current values at -0.61 %/ c for ambient temperatures above 25 c. parameter test conditions min typ max unit i drm repetitive peak off-state current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 750 v/ms, r source = 300 ? 350 v v (bo) impulse breakover voltage dv/dt 1000 v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/ s, linear current ramp, maximum ramp value = 10 a 362 v i (bo) breakover current dv/dt = 750 v/ms, r source = 300 ? 100 800 ma v t on-state voltage i t = 5a, t w = 100 s 5v i h holding current i t = 5 a, di/dt = 30 ma/ms 150 600 ma dv/dt critical rate of rise of off-state volta ge linear voltage ramp, maximum ramp value < 0.85v drm 5kv/ s i d off-state current v d = 50 v t a = 85 c 10 a c o off-state capacitance f = 1 mhz, v d = 1 v rms, v d = 0 v f = 1 mhz, v d = 1 v rms, v d = -1 v f = 1 mhz, v d = 1 v rms, v d = -2 v f = 1 mhz, v d = 1 v rms, v d = -50 v f = 1 mhz, v d = 1 v rms, v d = -100 v 84 67 62 28 26 pf electrical characteristics for any terminal pair, t a = 25 c (unless otherwise noted)
february 2005 - revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. TISP7350H3SLL overvoltage protector thermal characteristics, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit r c/w note: 5. eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths. parameter measurement information -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i trm i ppsm -i quadrant iii switching characteristic i tsm i tsm figure 1. voltage-current characteristic for terminal pairs pm-tisp4xxx-001-a
?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. copyright?2005, bourns, inc. litho in u.s.a. e 06/05 tsp0410 bourns sales offices region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 technical assistance region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 www.bourns.com bourns products are available through an extensive network of manufacturer s representatives, agents and distributors. to obtain technical applications assistance, a quotation, or to place an order, contact a bourns representative in your area.
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